? IRFL4105PBF v dss 55v r ds(on) 0.045 ?? i d 3.7a description fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the sot-223 package is designed fo r surface-mount using vapor phase, infra red, or wave soldering techniques. its unique package design allows for easy automatic pick-and-place as with other sot or soic package s but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. power dissipation of 1.0w is possible in a typical surface mount application. 1 2016-5-27 ? g d s gate drain source ? surface mount ? advanced process technology ? ultra low on-resistance ? dynamic dv/dt rating ? fast switching ? fully avalanche rated ? lead-free hexfet ? power mosfet sot-223 base part number package type standard pack orderable part number form quantity IRFL4105PBF sot-223 tape and reel 2500 IRFL4105PBF symbol parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v ? 5.2 a ? i d @ t a = 25c continuous drain current, v gs @ 10v ? 3.7 i d @ t a = 70c continuous drain current, v gs @ 10v ? 3.0 i dm pulsed drain current ? 30 p d @t a = 25c maximum power dissipation (pcb mount) ? 2.1 w p d @t a = 25c maximum power dissipation (pcb mount) ? 1.0 linear derating factor (pcb mount) ? 8.3 mw/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 110 mj i ar avalanche current ? 3.7 a e ar repetitive avalanche energy ? 0.10 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 150 c ? t stg storage temperature range absolute maximum ratings thermal resistance ? symbol parameter typ. max. units c/w r ? ja junction-to-ambient (pcb mount, steady state) ? 90 120 r ? ja junction-to-ambient (pcb mount, steady state) ? 50 60
? IRFL4105PBF 2 2016-5-27 notes: ? ? repetitive rati ng; pulse width limited by max. junction temperature. (see fig. 11) ? starting t j = 25c, l = 16mh, r g = 25 ? , i as = 3.7a (see fig. 12) ? i sd ?? 3.7a, di/dt ?? 110a/s, v dd ?? v (br)dss , t j ? 150c. ? pulse width ?? 300s; duty cycle ? 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.058 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.045 ??? v gs = 10v, i d = 3.7a ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a gfs forward trans conductance 3.8 ??? ??? s v ds = 25v, i d = 1.9a i dss drain-to-source leakage current ??? ??? 25 a v ds = 55 v, v gs = 0v ??? ??? 250 v ds = 44v,v gs = 0v,t j =150c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v q g total gate charge ??? 23 35 nc ? i d = 3.7a q gs gate-to-source char ge ??? 3.4 5.1 v ds = 44v q gd gate-to-drain charge ??? 9.8 15 v gs = 10v , see fig. 6 and 13 ? t d(on) turn-on delay time ??? 7.1 ??? ns v dd = 28v t r rise time ??? 12 ??? i d = 3.7a t d(off) turn-off delay time ??? 19 ??? r g = 6.0 ?? t f fall time ??? 12 ??? r d = 7.5 ??? see fig. 10 ? c iss input capacitance ??? 660 ??? pf ? v gs = 0v c oss output capacitance ??? 230 ??? v ds = 25v c rss reverse transfer capacitance ??? 99 ??? ? = 1.0mhz, see fig. 5 source-drain ratings and characteristics parameter min. typ. max. units conditions i s continuous source current ??? ??? 1.3 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 30 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 3.7a,v gs = 0v ?? t rr reverse recovery time ??? 55 82 ns t j = 25c ,i f = 3.7a q rr reverse recovery charge ??? 120 170 nc di/dt = 100a/s ??
? IRFL4105PBF 3 2016-5-27 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics 1 10 100 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse width t = 25c c a 4.5v 1 10 100 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse width t = 150c a 4.5v j 1 10 100 4.0 4.5 5.0 5.5 6.0 6.5 7.0 gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 25v 20s pulse width t = 150c t = 25c ds j j 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 3.7a d
? IRFL4105PBF 4 2016-5-27 fig 5. typical capacitance vs. drain-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage fig 6. typical gate charge vs. gate-to-source voltage 0 200 400 600 800 1000 1200 11 01 0 0 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 10203040 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 9 v = 24v v = 15v ds ds i = 3.7a d 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 0.1 1 10 100 0.1 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) t = 25c t = 150c single pulse 10s 100s 1ms 10ms a a j
? IRFL4105PBF 5 2016-5-27 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9a. basic gate charge waveform fig 10a. switching time test circuit fig 10b. switching time waveforms fig 9b. gate charge test circuit 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 t , rectangular pulse duration (sec) 1 d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) a thermal response (z ) thja p t 2 1 t dm notes: ? 1. duty factor d = t / t 2. peak t = p x z + t ??? ? 1 2 j dm thja a ?? ?
? IRFL4105PBF 6 2016-5-27 ? fig 12c. maximum avalanche energy vs. drain current fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as 0 50 100 150 200 250 300 25 50 75 100 125 150 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) v = 25v i top 1.7a 3.0a bottom 3.7a dd d
? IRFL4105PBF 7 2016-5-27 ? fig 13. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets
? IRFL4105PBF 8 2016-5-27 sot-223 (to-261aa) package outline (dimensions are shown in millimeters (inches) note: for the most current drawing please refer to infineon?s web site www.infineon.com fl014n date code y= year ww= work week a= automotive, lead free sot-223(to-261aa) part marking information
? IRFL4105PBF 9 2016-5-27 sot-223(to-261aa) tape and reel ( dimensions are shown in millimeters (inches) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ. 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) min. 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel contains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) max. 14.40 (.566) 12.40 (.488) 4 4 note: for the most current drawing please refer to infineon?s web site www.infineon.com
? IRFL4105PBF 10 2016-5-27 ? revision history date comments 5/27/2016 ?? updated datasheet with corporate template. ?? added disclaimer on last page. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? sot-223 msl1 (per jedec j-std-020d) ?? rohs compliant yes moisture sensitivity level ? ? qualification standards can be found at in neon?s ? web ? site? www.in neon.com ?? applicable version of jedec standar d at the time of product release. trademarks ? of ? in neon ? technologies ? ag ? hvic?, ? ipm?, ? pfc?, ? au \ convertir?, ? aurix?, ? c166?, ? canpak?, ? cipos?, ? cipurse?, ? cooldp?, ? coolgan?, ? coolir?, ? coolmos?, ? coolset?, ? coolsic?, ? dave?, ? di \ pol?, ? directfet?, ? drblade?, ? easypim?, ? econobridge?, ? econodual?, ? econopack?, ? econopim?, ? eicedriver?, ? eupec?, ? fcos?, ? ganpowir?, ? hexfet?, ? hitfet?, ? hybridpack?, ? imotion?, ? iram?, ? isoface?, ? isopack?, ? ledrivir?, ? litix?, ? mipaq?, ? modstack?, ? my\ d?, ? novalithic?, ? optiga?, ? op mos?, ? origa?, ? powiraudio?, ? powirstage?, ? primepack?, ? pr imestack?, ? profet?, ? pro \ sil?, ? rasic?, ? real3?, ? smar tlewis ?, ? solid ? flash?, ? spoc?, ? strongirfet?, ? supirbuck?, ? tempfet?,? trenchstop?, ? tricore?, ? uhvic?, ? xhp?, ? xmc? ? ? trademarks ? updated ? november ? 2015 ? ? other ?trademarks ? all ? referenced ? product ? or ? service ? names ? and ? trademarks ? are ? the ? property ? of ? their ? respec ve ? owners. ? ?edi on ? 2016 \ 04 \ 19? published ? by ? in neon ?technologies ?ag ? 81726 ? munich, ? germany ? ?? ? ? 2016 ?in neon ? technologies ?ag.? all ?rights ? reserved. ? ?? do ?you ? have ?a ? ques on ? about ?this ? document? ? email: ? erratum@in neon.com ? ? document ? reference ? ifx1 ? important ? notice ? the ? informa on ?given ?in ?this ?document ?shall ?in ? no ? event ?be ? reg a rd ed ?as ?a ?guarantee ?of ? condi ons ? or ? characteris cs ?? (?bescha ? enheitsgaran e?) ?. ? ?? with ? respect ? to ? any ? examples, ? hints ? or ? any ? typical ? values ? stated ? herein ? and/or ? any ? informa on ? regarding ? the ? applica on ? of ? the ? product, ? in neon ? technologies ? hereby ? disclaims ? any ? and? all ? warran es ? and ? liabili es ? of ? any ? kind, ? including ? without ? lim ita on ? war ran es ? of ? non \ infringement ? of ? intellectual ?property ? rights ?of ?any ? third ?party. ? ?? in ? addi on, ? any ? informa on ? given? in ? this ? document ? is ? subject ? to ? customer?s ? compliance ? with ? its ? obliga ons ? stated ? in ? this ? document ? and? any ? applicable ? legal ? requirements, ? norms ? and ? standards? conce r n ing ? customer?s ? products ? and ? any ? use ? of ? the ? product ? of ? in neon ? technologies ? in ? customer?s ? applica ons. ? ?? the ? data ? contained ? in ? this ? document ? is ? exclusively ? intended ? for ? technically ? trained ? sta? . ? it ? is ? the ? responsibility ?of ? customer?s ? technical ? departments ? to ? evaluate ? the ? suitability ? of ? the ? product ? for ? the ? intended ? applic a on ? and ? the ? completeness ? of ? the ? product ? informa on ? given? in ? this ? document ? with ? respect ?to ?such ? applicaon. ? ?? for ? further ? informa on ? on ? the ? product, ? technology, ? delivery ? terms ? and ? condi ons ? and ? prices ? please ? contact ? your ? nearest ? in neon ? technologies ? o ? ce? ( www.in neon.com ). ? ? ?please ? note ? that ? this ? product ? is ? not ? quali ed ? accordi n g ? to ? the ? ae c ? q100 ? or ? aec ? q101 ? documents ? of ?the ?automo ve ? electronics ? council. ?? warnings ? ?due ? to ? technical ? requirements ? products ? may ? contain ? dangerous ? substances. ? for ? informa on ? on ? the ? types ? in ? ques on ? please ? contact ? your ? nearest ? in neon ? technologies?o ? ce . ?? ? except ? as ? otherwise ? explic itly ? approved ? by ? in neon ? technologies ? in ? a ? wri en ? do cument ? signed ? by ? authorized ? representa ves? of ? in neon ? technologies, ? in neon ? technologies? ? products ? may ? not ? be ? used ? in ? any ? applica ons ? where ? a ? failure ? of ? the ? product ? or ? any ? consequences ? of ? the ? use ? thereof ? can ? reasonably ? be ?expected ?to ?re sult ? in ? personal ? injury. ?? ?? ?? ??
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